STCC formula including polarization and M3D effects in high-NA EUV lithography

Hopkins' TCC formula is conventionally used in optical lithography simulation.However, in EUV lithography, the TCC formula must be modified to account for the mask 3D (M3D) effect of the thick EUV mask absorber.In the previous paper, we proposed the STCC (Source-position dependent TCC) formula, which used three TCCs (TCC, TCCSX, and TCCSY) to represent the source-position dependence of the M3D effect.The STCC formula was the basis of our CNN model, accelerating EUV lithography simulations.In this report, the STCC formula is extended to include the polarization effect, which is not negligible in high-NA EUV lithography.We show that an additional coherence function C must be introduced into the STCC formula.C represents the effect of the electric field rotation in the meridional plane, which depends on the polarization = x or y.As a result, six TCCs (TCC, TCCSX, and TCCSY) are required for high-NA EUV lithography simulation.