4 <i>s</i> Molecular Orbitals and Strongly Correlated 3d States in TiO <i> <sub>x</sub> </i> and VO <i> <sub>x</sub> </i>

as bad metals and strongly suggests that stoichiometric and defect-free TiO and VO are Mott-Hubbard insulators.

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Publication Details

Journal
Journal of the American Chemical Society
Published
2026-04-17
DOI
https://doi.org/10.1021/jacs.5c22806
Primary Topic
Transition Metal Oxide Nanomaterials
Type
article
Field-Weighted Citation Impact
0.00

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4 s Molecular Orbitals and Strongly Correlated 3d States in TiO x and VO x

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4 s Molecular Orbitals and Strongly Correlated 3d States in TiO x and VO x

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article en

Abstract

as bad metals and strongly suggests that stoichiometric and defect-free TiO and VO are Mott-Hubbard insulators.

Journal of the American Chemical SocietyVol. 148(16)
Waseda University (JP), Osaka Prefecture University (JP), University of Cologne (DE), National Synchrotron Radiation Research Center (TW), Max Planck Institute for Chemical Physics of Solids (DE), Tokyo Metropolitan University (JP)
Japan Society for the Promotion of Science
Openalex Percentile: Top 21%
Transition Metal Oxide Nanomaterials
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