Guest Editorial: Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors, 2nd Edition

Following the remarkable success of the first edition, we are honored to present the second edition of the Special Issue titled “Recent Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors” [...]

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Publication Details

Journal
Crystals
Published
2026-04-17
DOI
https://doi.org/10.3390/cryst16040270
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00
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article

Guest Editorial: Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors, 2nd Edition

Peng Chen, Zhizhong Chen
Crystals
GaN-based semiconductor devices and materials
article

Guest Editorial: Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors, 2nd Edition

Peng Chen, Zhizhong Chen
article en

Abstract

Following the remarkable success of the first edition, we are honored to present the second edition of the Special Issue titled “Recent Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors” [...]

CrystalsVol. 16(4)
Peking University (CN), Southeast University (CN), Nanjing University (CN)
Openalex Percentile: Top 18%
GaN-based semiconductor devices and materials
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Guest Editorial: Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors, 2nd Edition — Peng Chen, Zhizhong Chen · Crystals (2026) | TGRS Research Map | TGRS