Infrared In-Sensor Computing with ReSe <sub>2</sub> Photoelectric Memristor Arrays
channel with in-plane ferroelectric polarization, the devices exhibit highly linear (99%), nonvolatile, multilevel modulation of self-powered photoresponsivity, enabling stable analog photoelectric weight programming with near-infrared sensitivity. Leveraging these properties, a 5 × 9 photoelectric memristor crossbar array is employed for direct infrared image sensing and processing at the sensor level. A proof-of-concept infrared image recognition task is demonstrated with in situ sensing and classification, without intermediate data conversion, external computing units, or bias-assisted operation, achieving high recognition accuracy and robust classification margins even in the presence of noise. This work establishes a practical pathway toward compact, low-latency, and energy-efficient infrared in-sensor computing systems, highlighting the potential for next-generation intelligent vision hardware.
Authors
- Chunxiao Cong (ORCID: https://orcid.org/0000-0001-9786-825X)
- Xiaofei Yue
- Zhi‐Jun Qiu (ORCID: https://orcid.org/0000-0001-8197-9975)
- Dacheng Xia
- B Zhang
- Laigui Hu (ORCID: https://orcid.org/0000-0003-1995-1423)
- Shuwen Shen
- Chenxu Sheng
- Ran Liu
- Peilin Sun
- Kai Xu
Institutions
- Fudan University (CN)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2026-04-17
- DOI
- https://doi.org/10.1021/acsami.6c02968
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China Stem Cell and Translational Research