Probing Intraband Carrier Dynamics in Degenerately N-Doped PbS Quantum Dots and Their Implications in Optoelectronic Devices
, accompanied by varying carrier recombination pathways associated with different doping levels. Notably, the average carrier relaxation lifetime is 88 ps for 5.4 nm QDs, whereas highly doped 7.7 nm QDs exhibit a significantly shorter carrier lifetime of 20 ps. These results not only elucidate the intraband optical properties of PbS QDs but also provide valuable insights for comparing carrier lifetimes to carrier transit times, thereby offering guidance for the design of future mid-infrared optoelectronic devices.
Authors
- Gerasimos Konstantatos (ORCID: https://orcid.org/0000-0001-7701-8127)
- Mariona Dalmases (ORCID: https://orcid.org/0000-0002-4151-6586)
- Rajesh Bera (ORCID: https://orcid.org/0000-0001-8542-4985)
- Gaurav Kumar
- Mariia Shevchenko
Institutions
- Institució Catalana de Recerca i Estudis Avançats (ES)
- Institute of Photonic Sciences (ES)
- Barcelona Institute of Science and Technology (ES)
- Institute of Science and Technology
Publication Details
- Journal
- The Journal of Physical Chemistry Letters
- Published
- 2026-04-17
- DOI
- https://doi.org/10.1021/acs.jpclett.6c00623
- Primary Topic
- Quantum Dots Synthesis And Properties
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Fundación Cellex
- Centres de Recerca de Catalunya
- Agencia Estatal de Investigación
- H2020 European Research Council
- H2020 Marie Skłodowska-Curie Actions