Thermal Dephasing of Localized Vibrations and Quasi-Elastic Scattering in Heavily Doped Silicon: Raman Spectroscopic Evidence
and the electronic continuum. Overall the findings present an improved insight about the physical processes taking place at the microscopic level in a heavily doped semiconductor.
Authors
- Deb Kumar Rath (ORCID: https://orcid.org/0009-0007-4637-3194)
- Sharmistha Singh
- Rajesh Kumar (ORCID: https://orcid.org/0000-0001-7977-986X)
- S K Satish Kumar
- Partha Sarathi Rout
- Bhumika Sahu
- Subin Kaladi Chondath (ORCID: https://orcid.org/0000-0003-4618-2236)
- Saumya Srivastava
- Nikita Ahlawat (ORCID: https://orcid.org/0009-0009-1844-9803)
Institutions
- Centre of Excellence for Advanced Materials (CN)
- Indian Institute of Technology Indore (IN)
Publication Details
- Journal
- The Journal of Physical Chemistry Letters
- Published
- 2026-04-17
- DOI
- https://doi.org/10.1021/acs.jpclett.6c00665
- Primary Topic
- Electromagnetic Effects on Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Department of Science and Technology, Ministry of Science and Technology, India
- Council of Scientific and Industrial Research, India
- University Grants Commission
- Ministry of Education, India
- Indian Institute of Technology Indore
- Science and Engineering Research Board