Epitaxial β‐Ga <sub>2</sub> O <sub>3</sub> /GaN Heterojunction Based UV‐C/UV‐A Photodetectors with Superior Responsivity and Stability Under Vertical and Lateral Mode Operations
and band-edge absorption in GaN, enabled by engineered band alignment. This work establishes a generalizable design strategy for next-generation dual-band UV photodetectors for flame detection, space-based monitoring, environmental safety, and secure communications.
Authors
- Ramakrishnan Ganesan (ORCID: https://orcid.org/0000-0003-4122-3174)
- Sunil Singh Kushvaha (ORCID: https://orcid.org/0000-0003-0698-7486)
- Bipul Kumar Pradhan
- Simran Nehra
- Chung‐Li Dong (ORCID: https://orcid.org/0000-0002-4289-4677)
- Anjana Dogra (ORCID: https://orcid.org/0000-0002-2678-4398)
- Asokan Kandasami (ORCID: https://orcid.org/0000-0002-0613-219X)
- Dhruvika Tyagi
- Roopa
Institutions
- Tamkang University (TW)
- Birla Institute of Technology and Science - Hyderabad Campus (IN)
- University of Petroleum and Energy Studies (IN)
- Council of Scientific and Industrial Research (IN)
- CSIR National Physical Laboratory of India (IN)
- Academy of Scientific and Innovative Research (IN)
Publication Details
- Journal
- Small
- Published
- 2026-04-17
- DOI
- https://doi.org/10.1002/smll.202511610
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00