Sub-0.1 nm linewidth, >10 W mid-IR pulsed laser from a type-II ZGP OPO with intracavity silicon etalons
We report a narrow-linewidth, precisely tunable, high-power type-II ZGP OPO system pumped by a linewidth-narrowed Ho:YAG oscillator. Leveraging the narrow gain bandwidth of type-II ZGP and the high mode selectivity of silicon etalons, the system delivers 11.4 W at 3.09 μm with a linewidth of 0.07 nm (2.2 GHz) and 7.5 W at 6.46 μm with a linewidth of 1.7 nm. Insertion of the intracavity etalons compresses the signal linewidth by >10× without a significant power penalty. Precise temperature and angle control enable signal tuning from 3029 nm to 3170 nm (∼5 THz) with 0.5 GHz precision. This simple, cost-effective approach offers a powerful solution for narrow-linewidth mid-infrared sources.
Authors
- 申玉
- Qin Chen (ORCID: https://orcid.org/0000-0001-5528-8732)
- Peng Wang (ORCID: https://orcid.org/0000-0002-6442-2849)
- Zhong-zheng Chen
- Xiao-Yong Guo
- Ya Wen
- Shenjin Zhang
- YOU FANG
- Yong Bo
- qinjun peng
- Guang LI
Institutions
- Qilu University of Technology (CN)
Publication Details
- Journal
- Optics Letters
- Published
- 2026-04-17
- DOI
- https://doi.org/10.1364/ol.597124
- Primary Topic
- Solid State Laser Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00