Air sensitivity of GaSe 2D material and its potential implications on device reliability

which is possibly due to defect sites or dangling bonds. This oxidation encourages the formation of hemispherical blisters on the material surface. EDX analysis indicates that these blisters are Se-rich while Raman spectroscopy confirms the presence of amorphous and crystalline Se in these regions while also showing the disappearance of the dominant vibrational modes of GaSe. This work emphasises the importance of the environment's role and developing encapsulation strategies in relation to interface engineering and material stability for fabricating air-stable nanoelectronic devices.