Optical bandgap tailoring through compositional tuning in thermally evaporated antimony sulphoselenide solid solution thin films

Abstract Antimony chalcogenides solid solution (Sb 2 (S 1− x Se x ) 3 ) exhibit tunable optoelectronic properties suitable in various optoelectronic devices. Solid solution thin films were grown using thermal evaporation, followed by post-sulfurization/selenization at temperatures ranging from 250 °C–325 °C to modulate optoelectronic properties through compositional tuning. X-ray diffraction and Raman spectroscopy studies confirmed the phase formation. Scanning electron microscopy and energy-dispersive x-ray analysis revealed uniform surface morphology and composition as expected for the solid solution. Tailorable bandgap values from 1.72 eV to 1.30 eV were achieved for the compositional values varied between Sb 2 S 3 –Sb 2 Se 3 , in solid solution films grown at 100 °C and post processed at 300 °C.

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Publication Details

Journal
Materials Research Express
Published
2026-04-16
DOI
https://doi.org/10.1088/2053-1591/ae60e5
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
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article

Optical bandgap tailoring through compositional tuning in thermally evaporated antimony sulphoselenide solid solution thin films

P. Malar, Srinivasan Moosi Govindharajulu, Tharani priya Kalaiyarasan
Materials Research Express
Chalcogenide Semiconductor Thin Films
article

Optical bandgap tailoring through compositional tuning in thermally evaporated antimony sulphoselenide solid solution thin films

P. Malar, Srinivasan Moosi Govindharajulu, Tharani priya Kalaiyarasan
article en

Abstract

Abstract Antimony chalcogenides solid solution (Sb 2 (S 1− x Se x ) 3 ) exhibit tunable optoelectronic properties suitable in various optoelectronic devices. Solid solution thin films were grown using thermal evaporation, followed by post-sulfurization/selenization at temperatures ranging from 250 °C–325 °C to modulate optoelectronic properties through compositional tuning. X-ray diffraction and Raman spectroscopy studies confirmed the phase formation. Scanning electron microscopy and energy-dispersive x-ray analysis revealed uniform surface morphology and composition as expected for the solid solution. Tailorable bandgap values from 1.72 eV to 1.30 eV were achieved for the compositional values varied between Sb 2 S 3 –Sb 2 Se 3 , in solid solution films grown at 100 °C and post processed at 300 °C.

Materials Research ExpressVol. 13(9)
SRM Institute of Science and Technology (IN)
Openalex Percentile: Top 25%
Chalcogenide Semiconductor Thin Films
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