Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal

under off-state drain voltage stress by injecting holes into the buffer layer and hence initiating a light-pumping effect, and simultaneously also by flattening the electric field peak on the drain side beneath the gate and thus significantly mitigating hole loss in the gate region and electron capture in the buffer layer. This study provides a theoretical basis for the application of the p-NiO RESURF terminal in p-GaN HEMTs.