8.3‐in. 1058 ppi Crystal Indium Oxide Display With Side‐by‐Side Method Using Fine Metal Mask and Partition Wall Dividing OLED in Subpixels
ABSTRACT We introduce a technology enabling high‐resolution organic light‐emitting diode displays exceeding a pixel density of 1000 ppi using a crystal indium oxide backplane without requiring photolithographic patterning. In addition, a partition wall between subpixels and OCTILE pixel arrangement allows applying a conventional fine metal mask process to the fabrication of high‐resolution displays.
Authors
- Koji Kusunoki
- Sachiko Yamagata
- Rai Sato
- Shunpei Yamazaki (ORCID: https://orcid.org/0000-0001-6055-8987)
- Satoru Idojiri
- Shingo Eguchi (ORCID: https://orcid.org/0009-0003-7823-3074)
- Seiko Inoue
- Takayuki Oide
- Yasutaka Nakazawa
- Tomoya Aoyama
- Sho Kato
- Daisuke Kubota (ORCID: https://orcid.org/0000-0001-9902-8254)
Institutions
- Semiconductor Energy Laboratory (Japan) (JP)
Publication Details
- Journal
- Journal of the Society for Information Display
- Published
- 2026-04-15
- DOI
- https://doi.org/10.1002/jsid.70080
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00