Study of Large Modulation Bandwidth GaN-Based Laser Diodes with Different Ridge Waveguide Structures

With the advent of 6G mobile communication, the demand for ultra-high bandwidth wireless communication has increased rapidly, drawing significant attention to visible light communication (VLC) as a promising emerging technology. GaN-based laser diodes (LDs) are regarded as high-speed light sources for VLC owing to their high modulation bandwidth and high optical power density. Apart from the active region design, the LD’s structure also plays a crucial role in determining their dynamic properties, which have yet to be thoroughly studied in III-nitride LDs. In this work, we systematically investigate InGaN/GaN laser diodes with three ridge waveguide configurations: a conventional single-ridge structure, a dual-ridge large-mesa structure, and a dual-ridge small-mesa structure. The threshold current, small-signal modulation bandwidth of devices with different structures are comparatively analyzed. Experimental results reveal that the double-ridge small mesa laser diode achieves a modulation bandwidth of −3 dB at 6.02 GHz. These results provide valuable insights into the structural optimization of GaN-based high-speed laser diodes and offer practical guidance for the development of high-performance, energy-efficient VLC transmitters.