From architectures to device physics: Pathways to integrate lateral, vertical, and heterogeneous schemes in gallium oxide transistors

As an emerging ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has attracted considerable research interest since its discovery. It exhibits outstanding material properties and compatibility with low-cost fabrication techniques, making it a highly promising candidate for next-generation ultra-high power and high-frequency applications. Over the past decades, Ga2O3-based transistors have undergone rapid development and demonstrated strong potential in various domains. This review systematically summarizes recent progress in the architecture and performance of β-Ga2O3 transistors that have garnered significant attention. We approach this review from the perspective of application domains, and within each category, we further discuss device variations in detail based on structural configurations or operating mechanisms. Key structures covered include lateral and vertical β-Ga2O3 metal–oxide–semiconductor field-effect transistors for power electronics, radio frequency β-Ga2O3 transistors, and β-Ga2O3 thin-film transistors for flexible applications. This work aims to provide a comprehensive reference and to inspire future research directions in the field of Ga2O3 transistor technologies.