GaN lateral pn junctions by MBE <i>in situ</i> selective area sublimation and regrowth
Authors
- Kathleen T. Smith (ORCID: https://orcid.org/0000-0002-7492-4789)
- Vladimir Protasenko (ORCID: https://orcid.org/0000-0002-8469-1157)
- Hardik Murarka
- Debdeep Jena (ORCID: https://orcid.org/0000-0002-4076-4625)
- Madhav Ramesh (ORCID: https://orcid.org/0000-0003-0396-561X)
- Thai‐Son Nguyen (ORCID: https://orcid.org/0000-0002-1193-834X)
- Chandrashekhar Savant (ORCID: https://orcid.org/0000-0001-7174-1103)
- Jimy Encomendero (ORCID: https://orcid.org/0000-0002-1597-1761)
- Huili Grace Xing (ORCID: https://orcid.org/0000-0002-2709-3839)
- Debaditya Bhattacharya (ORCID: https://orcid.org/0000-0002-9217-1813)
- Jayeesh Arora (ORCID: https://orcid.org/0000-0001-6383-7818)
Publication Details
- Journal
- Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
- Published
- 2026-04-16
- DOI
- https://doi.org/10.1116/6.0005402
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science Foundation
- Semiconductor Research Corporation
- Defense Sciences Office, DARPA