GaN lateral pn junctions by MBE <i>in situ</i> selective area sublimation and regrowth

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Publication Details

Journal
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Published
2026-04-16
DOI
https://doi.org/10.1116/6.0005402
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

GaN lateral pn junctions by MBE in situ selective area sublimation and regrowth

Kathleen T. Smith, Vladimir Protasenko, Hardik Murarka, Debdeep Jena et al.
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
GaN-based semiconductor devices and materials
article

GaN lateral pn junctions by MBE in situ selective area sublimation and regrowth

Kathleen T. Smith, Vladimir Protasenko, Hardik Murarka, Debdeep Jena, Madhav Ramesh, Thai‐Son Nguyen, Chandrashekhar Savant, Jimy Encomendero, Huili Grace Xing, Debaditya Bhattacharya, Jayeesh Arora
article en

Abstract

No abstract available for this paper.
Journal of Vacuum Science & Technology A Vacuum Surfaces and FilmsVol. 44(3)
Cornell University (US)
National Science Foundation, Semiconductor Research Corporation, Defense Sciences Office, DARPA
Openalex Percentile: Top 19%
GaN-based semiconductor devices and materials
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