Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency. This work shows that the current of a fully CMOS‐compatible Schottky barrier transistor can respond linearly to changes in either the source–gate or the source–drain voltage. This bi‐linearity allows analog vector multiplication directly at the device level. Alongside the access to independent biasing through the additional back‐gate offered by the FDSOI technology, which can be used to implement addition directly at the device level, it has great potential for in‐hardware computation. The performance and multilevel operation are demonstrated by the electrical characterization of a two‐transistor system, showcasing how the technology could be implemented in larger crossbar arrays. The potential for in‐hardware computation is evaluated against a full in‐software solution by comparing the inference performance on the Iris dataset. The simulated in‐hardware schemes utilizing the back‐biased Schottky barrier transistors can achieve the same accuracy as the digital implementation but with an order of magnitude less power dissipation per operation when compared to CMOS‐based digital hardware accelerators proposed in the literature.
Authors
- Jens Trommer (ORCID: https://orcid.org/0000-0003-2972-438X)
- Thomas Mikolajick (ORCID: https://orcid.org/0000-0003-3814-0378)
- V. Sessi (ORCID: https://orcid.org/0000-0001-5312-2827)
- Ian O’Connor (ORCID: https://orcid.org/0000-0002-6238-9600)
- Juan Martínez
- Giulio Galderisi (ORCID: https://orcid.org/0000-0002-6997-5370)
- Brojogopal Sapui (ORCID: https://orcid.org/0009-0003-2657-4205)
- P. Javorka
- Sara Mannaa (ORCID: https://orcid.org/0009-0004-6339-9079)
- Niladri Bhattacharjee
- Yuxuan He
Institutions
- École Centrale de Lyon (FR)
- NaMLab (Germany) (DE)
- GlobalFoundries (Germany) (DE)
- Technische Universität Dresden (DE)
Publication Details
- Journal
- Advanced Electronic Materials
- Published
- 2026-04-15
- DOI
- https://doi.org/10.1002/aelm.202500864
- Primary Topic
- Low-power high-performance VLSI design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- H2020 Future and Emerging Technologies
- HORIZON EUROPE Digital, Industry and Space