Novel compact DC model of vertical <i>β</i> -Ga2O3 power transistors with parameter extraction

This work presents the simulated structure of Ga2O3 MOSFETs with a P-Ga2O3/AlN/SiC composite substrate and the development of a compact physical model for the threshold voltage and drain current using the gradual channel approximation. By solving the vertical potential and electric field distributions, the model systematically investigates the influence of channel length, width, doping concentration, composite substrate simulated structure, and substrate bias on the DC characteristics, incorporating the effects of short-channel effects, drain-induced barrier lowering, carrier velocity saturation, and channel length modulation. Through the introduction of correction factors, the compact DC parameter model with enhanced accuracy is established. Parameter extraction was conducted, with an error of less than 4.7% when compared with technology computer-aided design simulation data. This device provides a theoretical basis for the development of Ga2O3-based devices with high breakdown voltage and thermal conductivity. It also establishes an essential model foundation for the design of power integrated circuits based on Ga2O3 technology.