Elucidation of the Antiferroelectricity Mechanism in CsBi(MoO <sub>4</sub> ) <sub>2</sub>

Although the antiferroelectric compound CsBi(MoO4)2 has been known for a long time, the underlying mechanism remained poorly understood. No temperature-dependent crystallographic investigation was performed to solve this. In this work, a neutron diffraction study at 150 K was used to solve the crystal structure of the antiferroelectric phase existing between 135 and 330 K. X-ray absorption spectroscopy at room temperature and temperature-dependent diffraction studies between 150 K and the melting point were used to elucidate the mechanism driving the phase transition. The antiferroelectricity mechanism of CsBi(MoO4)2 is revealed to be driven by the temperature-dependent Bi displacement caused by the Bi 6s2 lone pair. The thermal expansion of CsBi(MoO4)2 between 150 K and its melting point is determined, as well. The current work solves the long-standing question of the origin of the antiferroelectricity in CsBi(MoO4)2.

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Journal
ACS Materials Au
Published
2026-04-15
DOI
https://doi.org/10.1021/acsmaterialsau.5c00246
Primary Topic
Solid-state spectroscopy and crystallography
Type
article
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article

Elucidation of the Antiferroelectricity Mechanism in CsBi(MoO 4 ) 2

Andries van Hattem, Gilles Wallez, Jörg Rothe, Kathy Dardenne et al.
ACS Materials Au
Solid-state spectroscopy and crystallography
article

Elucidation of the Antiferroelectricity Mechanism in CsBi(MoO 4 ) 2

Andries van Hattem, Gilles Wallez, Jörg Rothe, Kathy Dardenne, Rudy J. M. Konings, Indu Dhiman, Nick T. H. ter Veer
article en

Abstract

Although the antiferroelectric compound CsBi(MoO4)2 has been known for a long time, the underlying mechanism remained poorly understood. No temperature-dependent crystallographic investigation was performed to solve this. In this work, a neutron diffraction study at 150 K was used to solve the crystal structure of the antiferroelectric phase existing between 135 and 330 K. X-ray absorption spectroscopy at room temperature and temperature-dependent diffraction studies between 150 K and the melting point were used to elucidate the mechanism driving the phase transition. The antiferroelectricity mechanism of CsBi(MoO4)2 is revealed to be driven by the temperature-dependent Bi displacement caused by the Bi 6s2 lone pair. The thermal expansion of CsBi(MoO4)2 between 150 K and its melting point is determined, as well. The current work solves the long-standing question of the origin of the antiferroelectricity in CsBi(MoO4)2.

ACS Materials Au
Sorbonne Université (FR), Applied Materials (United Kingdom) (GB), Laboratoire Médiations (FR), Delft University of Technology (NL)
Openalex Percentile: Top 21%
Solid-state spectroscopy and crystallography
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