A review on advances in epitaxial growth technology of MoS2 2D materials

As a typical two-dimensional transition metal disulfide compound, MoS 2 shows great potential for applications in electronic and optoelectronic devices due to its unique electronic, optical and mechanical properties. Therefore, the preparation of wafer-scale MoS 2 has become cutting-ledge research to optimize the performance of electronic devices. Epitaxial growth technology is a key method to prepare high-quality, large-area single-crystal MoS 2 films. This paper reviews the research progress of MoS 2 epitaxial growth in recent years, focusing on substrate selection, lattice orientation control, and the application of epitaxial growth technology in the preparation of MoS 2 films. By systematically analyzing the epitaxial growth of MoS 2 on different substrates, the effects of lattice matching, interfacial interactions, and growth kinetics during the epitaxial growth process are summarized, as well as introducing two novel epitaxy methods, remote epitaxial growth and gold stencil-assisted stripping techniques. Finally, the future development direction of MoS 2 epitaxial growth technology and its application prospect in optoelectronic devices are envisioned.