Fluorination-Induced Interface Engineering of Polymeric Gate Dielectrics for High-Performance and Stable Organic Field-Effect Transistors

Interface engineering passivation and decreasing hydroxyl functional groups at the organic semiconductor layer/dielectric interface constitute one of the most efficient techniques to improve the electrical performance of organic field-effect transistors (OFETs). However, since highly polar hydroxyl functional groups are the main source of a high dielectric constant, this strategy reduces interfacial polarity at the expense of dielectric permittivity. To enable the organic semiconductor layer/dielectric layer interface to simultaneously exhibit strong chemical inertness and a high dielectric constant, we introduced a fluorinated cross-linker to promote the aggregation of hydroxyl functional groups within the bulk phase while forming a nonpolar, inert surface. Our results show that the incorporation of the FPA-3F cross-linker facilitates the formation of films with a low charge-trap density. Furthermore, the solution-processable nature of this polymer material enables its application as a dielectric layer in OFETs, achieving efficient charge transport and excellent operational stability during device operation. Furthermore, its integration into NOT, NOR, and NAND gates via printing technology demonstrates outstanding memory performance. This research provides a approach for fabricating stable and high-performance OFETs in a solution-polymerization high-k medium system.