Numerical investigation of rotating flow suction effects on transport phenomena in polysilicon chemical vapor deposition

Deposition rate and uniformity are crucial performance metrics in polysilicon chemical vapor deposition (CVD). This study presents a validated 2D computational model that couples transport phenomena with reaction kinetics for the SiHCl3-H2 system. Systematic single-factor and orthogonal analyses reveal susceptor rotation speed as the dominant parameter controlling deposition characteristics. Numerical simulations demonstrate that rotation-induced suction effects effectively modulate boundary layer thickness, with thinner, more uniform layers significantly enhancing heat transfer. Specifically, rotational operation at 1000 rpm enhances the deposition rate from 3.05 to 6.40 μm/min and improves uniformity substantially with relative deviation reduction from 49.2% to 8.1% compared to stationary conditions. Dimensionless analysis establishes a robust correlation between rotation-induced Nusselt number (Nu) enhancement and deposition performance, confirming the suction effect as an effective optimization mechanism for polysilicon CVD.