The cylindrical devices with tunable positive, infinite, and negative capacitance for dynamic random access memory
layer thickness (1.0 - 3.0 nm). A detailed analytical model and numerical simulation based on phase-field modeling, considering the ferroelectric polarization bound charge compensation by the injected/trapped interfacial carriers and the geometry effect of the cylinder, precisely identified the change of the inhomogeneous stray field energy, which played a crucial role in determining the capacitance state. Further analysis of the models revealed that the capacitance variation is strongly correlated to the extent of the initial polarization charge compensation of the ferroelectric domains and leakage mechanisms. This work provides guidelines for developing the next-generation capacitors in dynamic random access memory.
Authors
- Won‐Tae Koo (ORCID: https://orcid.org/0000-0002-2507-5020)
- Cheol Seong Hwang (ORCID: https://orcid.org/0000-0002-6254-9758)
- Seungyong Byun (ORCID: https://orcid.org/0009-0002-9590-2690)
- 서준성
- Seon Yong
- Youngmo Kim (ORCID: https://orcid.org/0000-0003-1415-3908)
- Taeone Youn
- Panithan Sriboriboon (ORCID: https://orcid.org/0000-0001-5170-5279)
- Gwangyeob Lee (ORCID: https://orcid.org/0000-0002-5472-5897)
- Heeyoung Jeon (ORCID: https://orcid.org/0000-0003-2168-7094)
- Ki Vin Im
- Dong Ik Suh
- Jaeyun Yi
- Seho Lee
- Yunseok Kim
- Seung Wook Ryu
- Ja-Yong Kim
Institutions
- SK Group (United States) (US)
- SK Group (South Korea) (KR)
- Seoul National University (KR)
- New Generation University College (ET)
- National University College (PR)
- Sungkyunkwan University (KR)
Publication Details
- Journal
- Nature Communications
- Published
- 2026-04-14
- DOI
- https://doi.org/10.1038/s41467-026-71823-z
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- SK Hynix
- National Research Foundation
- National Research Foundation of Korea
- Division of Materials Research