Electron drift velocity measurement of AlGaN/GaN single- and multi-channel Fin structures

This paper presents a method for extracting electron drift velocity vs electric field characteristics in AlGaN/GaN Fin structures by combining Fin-Hall bar and Fin-Transmission Line Model measurements. Carrier density and Ohmic contact resistivity were independently extracted as a function of Fin width, enabling accurate calculation of internal electric field and drift velocity from pulsed I–V curves. It is revealed that the drift velocity decreases with the narrowing of Fin width due to enhanced sidewall influence, and multi-channel structures show higher drift velocity thanks to weaker interaction between electrons and longitudinal optical phonons. This measurement method provides a quantitative approach for studying carrier transport behavior under high electric field, offering a fundamental tool for Fin-based device design and modeling.

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Publication Details

Journal
Applied Physics Letters
Published
2026-04-13
DOI
https://doi.org/10.1063/5.0314039
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Electron drift velocity measurement of AlGaN/GaN single- and multi-channel Fin structures

Jialun Liu, Xiaoning Zhan, Yu Zhou, Qingru Wang et al.
Applied Physics Letters
GaN-based semiconductor devices and materials
article

Electron drift velocity measurement of AlGaN/GaN single- and multi-channel Fin structures

Jialun Liu, Xiaoning Zhan, Yu Zhou, Qingru Wang, Qian Sun, Quan Dai, Meixin Feng, Xinkun Zhang, Cheng Li, Jiaanli Wang, Qian Li
article en

Abstract

This paper presents a method for extracting electron drift velocity vs electric field characteristics in AlGaN/GaN Fin structures by combining Fin-Hall bar and Fin-Transmission Line Model measurements. Carrier density and Ohmic contact resistivity were independently extracted as a function of Fin width, enabling accurate calculation of internal electric field and drift velocity from pulsed I–V curves. It is revealed that the drift velocity decreases with the narrowing of Fin width due to enhanced sidewall influence, and multi-channel structures show higher drift velocity thanks to weaker interaction between electrons and longitudinal optical phonons. This measurement method provides a quantitative approach for studying carrier transport behavior under high electric field, offering a fundamental tool for Fin-based device design and modeling.

Applied Physics LettersVol. 128(15)
University of Science and Technology of China (CN), Chinese Academy of Sciences (CN), Suzhou Institute of Nano-tech and Nano-bionics (CN)
National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Basic Research Program of Jiangsu Province, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 16%
GaN-based semiconductor devices and materials
DOISourceOpenAlex
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Electron drift velocity measurement of AlGaN/GaN single- and multi-channel Fin structures — Jialun Liu, Xiaoning Zhan, et al. · Applied Physics Letters (2026) | TGRS Research Map | TGRS