Zn-doping defect engineering toward high-performance chlorine evolution reaction and its mechanism study by <i>in situ</i> Raman spectroscopy

Chlorine, a key industrial chemical, is primarily produced through the chlor-alkali process using mixed-metal oxides (MMOs) like dimensionally stable anode (DSA). These anodes face challenges of high overpotential and poor selectivity due to competing oxygen evolution reaction (OER) pathways. This work presents a Zn-doped, defect-engineered RuTiSnZnO<em><sub>x</sub></em>&nbsp;catalyst on Ti foam to address these issues. The introduction of low-valence Zn creates lattice defects and induces a charge-deficient state at Ru sites. Critically, <em>in-situ</em>&nbsp;electrochemical Raman spectroscopy revealed that this Zn doping facilitates a decisive shift in the key reaction intermediate from Ru-O-Cl to Ru-Cl. This change in the intermediate species directly suppresses the competing OER pathway, thereby enhancing chlorine evolution reaction (CER)&nbsp;selectivity. The catalyst achieves a remarkably low overpotential of 45 mV at 10 mA·cm<sup>–</sup><sup>2</sup>&nbsp;and exhibits excellent stability with only 13 mV decay after 1000 hours of operation at 100 mA·cm<sup>–</sup><sup>2</sup>. Density functional theory (DFT) calculations further demonstrate that Zn incorporation optimizes the electronic structure by shifting the Ru d-band center closer to the Fermi level. This study elucidates how defect engineering through doping can selectively modulate reaction intermediates, providing a new strategy for developing high-performance, cost-effective CER electrocatalysts.

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Publication Details

Journal
Nano Research Energy
Published
2026-04-15
DOI
https://doi.org/10.26599/nre.2026.9120229
Primary Topic
Semiconductor materials and devices
Type
article
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article

Zn-doping defect engineering toward high-performance chlorine evolution reaction and its mechanism study by in situ Raman spectroscopy

Victoria A. Nikitina, Sergei V. Porokhin, Yao-Hui Wang, Wei An et al.
Nano Research Energy
Semiconductor materials and devices
article

Zn-doping defect engineering toward high-performance chlorine evolution reaction and its mechanism study by in situ Raman spectroscopy

Victoria A. Nikitina, Sergei V. Porokhin, Yao-Hui Wang, Wei An, Zhengxuan Li, Alexander V. Rudnev, Hua Zhang, Lei Huang, Zeyu Peng, Xiao-Ting Wang, Jianmin Su, Jian-Feng Li
article en

Abstract

Chlorine, a key industrial chemical, is primarily produced through the chlor-alkali process using mixed-metal oxides (MMOs) like dimensionally stable anode (DSA). These anodes face challenges of high overpotential and poor selectivity due to competing oxygen evolution reaction (OER) pathways. This work presents a Zn-doped, defect-engineered RuTiSnZnO<em><sub>x</sub></em>&nbsp;catalyst on Ti foam to address these issues. The introduction of low-valence Zn creates lattice defects and induces a charge-deficient state at Ru sites. Critically, <em>in-situ</em>&nbsp;electrochemical Raman spectroscopy revealed that this Zn doping facilitates a decisive shift in the key reaction intermediate from Ru-O-Cl to Ru-Cl. This change in the intermediate species directly suppresses the competing OER pathway, thereby enhancing chlorine evolution reaction (CER)&nbsp;selectivity. The catalyst achieves a remarkably low overpotential of 45 mV at 10 mA·cm<sup>–</sup><sup>2</sup>&nbsp;and exhibits excellent stability with only 13 mV decay after 1000 hours of operation at 100 mA·cm<sup>–</sup><sup>2</sup>. Density functional theory (DFT) calculations further demonstrate that Zn incorporation optimizes the electronic structure by shifting the Ru d-band center closer to the Fermi level. This study elucidates how defect engineering through doping can selectively modulate reaction intermediates, providing a new strategy for developing high-performance, cost-effective CER electrocatalysts.

Nano Research EnergyVol. 5(2)
Openalex Percentile: Top 26%
Semiconductor materials and devices
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