Advancing EUV Patterning: Innovations in Resist Platforms, Patterning Strategies, and Computational Approaches

Advances in microelectronics have been driven by a continuous reduction in feature size, enabled largely by innovations in lithographic technology and patterning materials. In this review, we trace the evolution of photoresist materials from early systems operating at 365 nm through 248, 193, 157, and 193 immersion lithography and then focus on the unique challenges encountered in 13.5 nm EUV lithography and the solutions developed to address them, emphasizing stochastic effects, secondary electron driven chemistry, and opportunities for broader element selection in resist design. Building on these concepts, we then survey the state-of-the-art EUV resist materials, including chemically amplified resists (CARs), metal-organic resists, molecular glass resists, chain scissionable resists, non-CAR systems, and dry deposited resists. Other patterning techniques, such as directed self-assembly and nanoimprint lithography, are also briefly discussed. The review further highlights the emerging role of computational chemistry and data-driven approaches in the development of patterning materials. In summary, this review connects molecular design principles with lithographic performance targets to inform future advancement of photoresist materials and patterning strategies.