Benchmarking of Ultrascaled Monolayer Halogenated Borophene Transistors: A Comprehensive First-Principles Quantum Transport Study
as channel materials for nMOSFET and pMOSFET, respectively, significantly improves the subthreshold performance, ON-OFF ratio, and energy-delay product. Furthermore, selecting appropriate underlap lengths for different gate lengths enables further device performance optimization. These findings provide a crucial theoretical foundation for the material and structural design and optimization of ultrascaled two-dimensional semiconductor transistors in the post-Moore era.
Authors
- Sichao Du (ORCID: https://orcid.org/0000-0003-3060-5759)
- Shuo Zhang (ORCID: https://orcid.org/0000-0002-2284-7427)
- Qi Shen
- Hao Xie
- Wen-Yan Yin
Institutions
- City University (BD)
- Integrated Optical Circuit Consultants (United States) (US)
- Research Institute for Electromagnetic Materials (JP)
- Communication University of Zhejiang (CN)
- Hangzhou City University
- Zhejiang University (CN)
Publication Details
- Journal
- ACS Omega
- Published
- 2026-04-14
- DOI
- https://doi.org/10.1021/acsomega.5c09965
- Primary Topic
- Graphene research and applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Zhejiang Provincial Postdoctoral Science Foundation
- National Natural Science Foundation of China