High-Gain, Broadband Ultraviolet Photodetection with a Mixed-Dimensional van der Waals Heterostructure

Mixed-dimensional van der Waals heterostructures integrating zero-dimensional quantum dots (QDs) with two-dimensional semiconductors provide a promising platform for broadband photodetection. Here we report a ZrS2 QDs/MoS2 hybrid photodetector exhibiting strong UV–visible photoresponse with high gain and specific detectivity. The device benefits from type-II band alignment and spectral overlap between ZrS2 emission and MoS2 absorption, and efficient energy transfer and charge separation are achieved. The device delivers a responsivity of 4.15 × 103 A/W at 365 nm and a specific detectivity of 8.71 × 1013 Jones, nearly an order of magnitude higher than that of pristine MoS2 devices. This work provides insight into optoelectronic coupling in 0D/2D heterostructures and offers a scalable strategy for UV photodetectors and optoelectronic sensing.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2026-04-14
DOI
https://doi.org/10.1021/acsaelm.6c00051
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

High-Gain, Broadband Ultraviolet Photodetection with a Mixed-Dimensional van der Waals Heterostructure

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High-Gain, Broadband Ultraviolet Photodetection with a Mixed-Dimensional van der Waals Heterostructure

Weiping Wu, Fenghua Liu, Joon Ching Juan, Dong Li, Whui Dhong Wong, Chenlu Mao, Yiting Zhang, Minrui He, Zhaoqian Wang
article en

Abstract

Mixed-dimensional van der Waals heterostructures integrating zero-dimensional quantum dots (QDs) with two-dimensional semiconductors provide a promising platform for broadband photodetection. Here we report a ZrS2 QDs/MoS2 hybrid photodetector exhibiting strong UV–visible photoresponse with high gain and specific detectivity. The device benefits from type-II band alignment and spectral overlap between ZrS2 emission and MoS2 absorption, and efficient energy transfer and charge separation are achieved. The device delivers a responsivity of 4.15 × 103 A/W at 365 nm and a specific detectivity of 8.71 × 1013 Jones, nearly an order of magnitude higher than that of pristine MoS2 devices. This work provides insight into optoelectronic coupling in 0D/2D heterostructures and offers a scalable strategy for UV photodetectors and optoelectronic sensing.

ACS Applied Electronic Materials
Hunan University (CN), Chinese Academy of Sciences (CN), University of Malaya (MY), Institute of Catalysis and Petrochemistry (RU), Shanghai Institute of Optics and Fine Mechanics (CN), University of Chinese Academy of Sciences (CN)
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Openalex Percentile: Top 20%
2D Materials and Applications
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