High-Resolution Cathodoluminescence Mapping for Doping Quantification across a Wide Range of Silicon Concentrations in GaN Epitaxial Layers

. This method enables simultaneous mapping of doping and strain, offering a powerful tool for the optimization of GaN-based power devices.

Authors

Konrad Sakowski (ORCID: https://orcid.org/0000-0003-1511-074X)
M. Veillerot (ORCID: https://orcid.org/0000-0002-9593-5647)
Julien Buckley (ORCID: https://orcid.org/0000-0003-0082-9903)
Thomas Kaltsounis (ORCID: https://orcid.org/0000-0002-9068-3161)
N Rochat
Gwénolé Jacopin (ORCID: https://orcid.org/0000-0003-0049-7195)
L. Borowik
Blend Mohamad
Zakariae M'Qaddem (ORCID: https://orcid.org/0000-0001-5105-7339)
Matthew Charles

Institutions

Institut polytechnique de Grenoble (FR)
Centre National de la Recherche Scientifique (FR)
Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
Institute of High Pressure Physics (PL)
Institut Néel (FR)
Laboratoire d'Électronique des Technologies de l'Information (FR)
University of Warsaw (PL)
Université Grenoble Alpes (FR)
Polish Academy of Sciences (PL)

Publication Details

Journal: Nano Letters
Published: 2026-04-14
DOI: https://doi.org/10.1021/acs.nanolett.6c00619
Primary Topic: GaN-based semiconductor devices and materials
Type: article
Field-Weighted Citation Impact: 0.00

Funders

Agence Nationale de la Recherche

Controls

|||

ALL TIME

JAN

FEB

MAR

APR

MAY

JUN

JUL

AUG

SEP

OCT

article

High-Resolution Cathodoluminescence Mapping for Doping Quantification across a Wide Range of Silicon Concentrations in GaN Epitaxial Layers

Konrad Sakowski, M. Veillerot, Julien Buckley, Thomas Kaltsounis et al.

Apr 14, 2026

Nano Letters

GaN-based semiconductor devices and materials

article

High-Resolution Cathodoluminescence Mapping for Doping Quantification across a Wide Range of Silicon Concentrations in GaN Epitaxial Layers

Konrad Sakowski, M. Veillerot, Julien Buckley, Thomas Kaltsounis, N Rochat, Gwénolé Jacopin, L. Borowik, Blend Mohamad, Zakariae M'Qaddem, Matthew Charles

April 14, 2026article en

Abstract

. This method enables simultaneous mapping of doping and strain, offering a powerful tool for the optimization of GaN-based power devices.

Nano LettersVol. 26(16)

Institut polytechnique de Grenoble (FR), Centre National de la Recherche Scientifique (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Institute of High Pressure Physics (PL), Institut Néel (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), University of Warsaw (PL), Université Grenoble Alpes (FR), Polish Academy of Sciences (PL)

Agence Nationale de la Recherche

Openalex Percentile: Top 21%

GaN-based semiconductor devices and materials

DOI Source OpenAlex

AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

High-Resolution Cathodoluminescence Mapping for Doping Quantification across a Wide Range of Silicon Concentrations in GaN Epitaxial Layers — Konrad Sakowski, M. Veillerot, et al. · Nano Letters (2026) | TGRS Research Map | TGRS