An optoelectronic synapse based on electrochemically deposited CuI thin film for neuromorphic visual processing
This work reports a low-cost optoelectronic synaptic device based on an electrochemically deposited CuI thin film. The electrochemical deposition technique enables large-area and uniform thin-film fabrication under low-temperature and ambient-pressure conditions, offering significant advantages of simple processing, cost-effectiveness, and compatibility with flexible substrates. Under 445 nm light stimulation, the device successfully emulates the biological synaptic functions, including paired-pulse facilitation, spike-width-dependent plasticity, spike-frequency-dependent plasticity, and spike-number-dependent plasticity. Furthermore, by implementing a convolutional neural network for backend processing of the device-generated optoelectronic pulse signals, a high training set recognition accuracy of 95.2% is achieved under 50% noise perturbation in clothing image classification tasks, validating its potential for low-power, highly parallel neuromorphic computing applications.
Authors
- X H Chen
- Chunli Jiang (ORCID: https://orcid.org/0000-0002-3138-9966)
- Hui Peng (ORCID: https://orcid.org/0000-0002-9062-2799)
- Chunhua Luo (ORCID: https://orcid.org/0000-0003-2423-7339)
- Qiufei Yu (ORCID: https://orcid.org/0009-0001-0188-0551)
- Xiaodong Tang
- Zhiwei Zhu (ORCID: https://orcid.org/0009-0004-8594-0989)
- Zhongao Yang (ORCID: https://orcid.org/0009-0004-4385-2091)
Institutions
- Shanxi University (CN)
- East China Normal University (CN)
Publication Details
- Journal
- Nanotechnology
- Published
- 2026-04-14
- DOI
- https://doi.org/10.1088/1361-6528/ae5f25
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China