The Effect of Thermal-Diffusion Doping on CdS:Cu Single Crystals

In this work, a study was carried out of CdS:Cu single crystals, which are characterized by different levels of their own defects. It is shown that copper is introduced into the crystal lattice as an acceptor impurity and, within the limits of its solubility, leads to a change in the type of electrical conductivity from electron to hole. It was found that varying the time of thermal diffusion alloying, the process temperature, and the copper concentration significantly affects the concentration and electroactivity of impurity atoms. This, in turn, results in obtaining samples with specific resistance in a wide range of values from $${{10}^{{ - 1}}}$$ to $${{10}^{9}}\;\Omega \;{\text{m}}$$ . It was additionally revealed that modification of the concentration of intrinsic defects and impurities allows targeted control of conductivity parameters and optimization of the electrical characteristics of the material. The obtained results have practical significance for the development and improvement of semiconductor devices operating under conditions requiring stable and predictable hole conductivity properties.