Effect of doping of the intermediate layer on the RF performances of GaN-based p-i-n diodes

In this article, we study the effect of the doping level in the intermediate layer of a pseudo-vertical GaN-based p-i-n diode. By decreasing the doping level, from 1.1 × 1016 to 1.6 × 1014 cm−3, we show that the OFF-state capacitance can be reduced by a factor 2.2, without affecting the ON-state resistance too much, which is increased by only 16%. The main consequence is an increase in the cutoff frequency by a factor 1.8, from 137 ± 5 to 250 ± 16 GHz. The DC characteristics of the diode are preserved since no significant variation of the turn on voltage has been found and no breakdown occurs for up to −200 V biasing.

Authors

Institutions

Publication Details

Journal
APL Electronic Devices
Published
2026-04-13
DOI
https://doi.org/10.1063/5.0319825
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Effect of doping of the intermediate layer on the RF performances of GaN-based p-i-n diodes

Jérôme Billoué, Y. Cordier, Julien Ladroue, Arnaud Yvon et al.
APL Electronic Devices
GaN-based semiconductor devices and materials
article

Effect of doping of the intermediate layer on the RF performances of GaN-based p-i-n diodes

Jérôme Billoué, Y. Cordier, Julien Ladroue, Arnaud Yvon, Daniel Alquier, Kevin Nadaud, Zihao Lyu, Quentin Paoli, Eric Frayssinet, Pedro Fernandes Paes Pinto Rocha
article en

Abstract

In this article, we study the effect of the doping level in the intermediate layer of a pseudo-vertical GaN-based p-i-n diode. By decreasing the doping level, from 1.1 × 1016 to 1.6 × 1014 cm−3, we show that the OFF-state capacitance can be reduced by a factor 2.2, without affecting the ON-state resistance too much, which is increased by only 16%. The main consequence is an increase in the cutoff frequency by a factor 1.8, from 137 ± 5 to 250 ± 16 GHz. The DC characteristics of the diode are preserved since no significant variation of the turn on voltage has been found and no breakdown occurs for up to −200 V biasing.

APL Electronic DevicesVol. 2(2)
Université de Tours (FR), STMicroelectronics (Switzerland) (CH), Sorbonne Université (FR), Groupe de Recherche en Droit, Économie, Gestion (FR), Services déconcentrés d'appui à la recherche Val de Loire (FR)
Agence Nationale de la Recherche
Openalex Percentile: Top 23%
GaN-based semiconductor devices and materials
DOIOpen Access PDFOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Effect of doping of the intermediate layer on the RF performances of GaN-based p-i-n diodes — Jérôme Billoué, Y. Cordier, et al. · APL Electronic Devices (2026) | TGRS Research Map | TGRS