Reversible Thickness Engineering in Amorphous In <sub>2</sub> O <sub>3</sub> Transistors
transistor performance, facilitating doping-free modulation of the threshold voltage and reversible switching between depletion- and enhancement-mode operation within a single device. Successful demonstration of inverters and ring oscillators confirms the robustness of this technique, establishing film thickness as a core design parameter for oxide semiconductors and paving the way for reconfigurable electronics.
Authors
- Shih-Chieh Chen
- Der‐Hsien Lien (ORCID: https://orcid.org/0000-0001-6774-2074)
- T. Kimura (ORCID: https://orcid.org/0000-0002-1253-2130)
- Sung-Tsun Wang (ORCID: https://orcid.org/0000-0002-6537-9774)
- Yi-Yu Pan
- Robert Tseng
- Yann-Wen Lan
- Yu-Cheng Chang
- Chu-Hsiu Hsu
Institutions
- National Taiwan Normal University (TW)
- Kyushu University (JP)
- Pioneer (United States) (US)
- National Yang Ming Chiao Tung University (TW)
Publication Details
- Journal
- Nano Letters
- Published
- 2026-04-13
- DOI
- https://doi.org/10.1021/acs.nanolett.5c06228
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science and Technology Council