High-yield fabrication of high-performance β-Ga2O3 MOSFETs on a (010) 2″ substrate

We have fabricated lateral β-Ga2O3 MOSFETs on a 2″ (010) substrate with peripheries ranging from 100 μm to 2 mm and an overall yield of 84.5% (over 95% excluding edge dies). Devices featured source–drain spacings of 1, 2, and 5 μm with regrown ohmic contacts and scaled T-gates. 1 μm devices had Ron as low as 24 Ω · mm and 5 μm devices showed Vbk as high as 863 V. Average fT and fmax for 1, 2 and 5 μm devices were 7 ± 2, 6 ± 1, and 3.7 ± 0.7 and 22 ± 4, 17 ± 3, and 9 ± 0.9 GHz, respectively. Under large-signal operation, a 2 mm-periphery, 2 μm device demonstrated a Pout value of 467 mW (26.7 dB) at 5 GHz, the highest reported net RF power for a Ga2O3 transistor. Aggregate device performance was analyzed and sources of device failure and performance degradation were identified, including short-channel effects and gate leakage. These results demonstrate the viability of β-Ga2O3 MOSFET fabrication on large-area substrates and provide insight into technical barriers in manufacturability.

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Publication Details

Journal
APL Electronic Devices
Published
2026-04-13
DOI
https://doi.org/10.1063/5.0323258
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.00

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High-yield fabrication of high-performance β-Ga2O3 MOSFETs on a (010) 2″ substrate

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APL Electronic Devices
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High-yield fabrication of high-performance β-Ga2O3 MOSFETs on a (010) 2″ substrate

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article en

Abstract

We have fabricated lateral β-Ga2O3 MOSFETs on a 2″ (010) substrate with peripheries ranging from 100 μm to 2 mm and an overall yield of 84.5% (over 95% excluding edge dies). Devices featured source–drain spacings of 1, 2, and 5 μm with regrown ohmic contacts and scaled T-gates. 1 μm devices had Ron as low as 24 Ω · mm and 5 μm devices showed Vbk as high as 863 V. Average fT and fmax for 1, 2 and 5 μm devices were 7 ± 2, 6 ± 1, and 3.7 ± 0.7 and 22 ± 4, 17 ± 3, and 9 ± 0.9 GHz, respectively. Under large-signal operation, a 2 mm-periphery, 2 μm device demonstrated a Pout value of 467 mW (26.7 dB) at 5 GHz, the highest reported net RF power for a Ga2O3 transistor. Aggregate device performance was analyzed and sources of device failure and performance degradation were identified, including short-channel effects and gate leakage. These results demonstrate the viability of β-Ga2O3 MOSFET fabrication on large-area substrates and provide insight into technical barriers in manufacturability.

APL Electronic DevicesVol. 2(2)
United States Air Force Research Laboratory (US), Cornell University (US), Defense Engineering Corporation (United States) (US), Defense Research Associates (United States) (US)
Air Force Office of Scientific Research, Air Force Research Laboratory
Openalex Percentile: Top 29%
Ga2O3 and related materials
DOIOpen Access PDFOpenAlex
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