A Low-Power Low-IF BLE Receiver Front-End with a Common-Gate TIA and Gm-C Complex Filter for Body Area Network Applications

In this article, a low-power low-intermediate-frequency (Low-IF) receiver front-end is presented for Bluetooth Low Energy (BLE) body area network (BAN) applications. The receiver employs an input matching network, an inductorless self-biased inverter-based low-noise transconductance amplifier (LNTA), a single-balanced passive mixer, a common-gate transimpedance amplifier (TIA), and a Gm-C complex filter for image suppression. Native MOS devices are adopted to support low-voltage operation and reduce static power consumption. The interstage on-chip coupling capacitor between the RF front-end and the TIA is removed by aligning the DC operating points of the two stages. The receiver front-end is implemented in a 55 nm standard CMOS process and occupies an active area of 0.081 mm2, excluding bonding pads. Post-layout simulations show that the proposed design achieves 45.2 dB gain, 7.2 dB noise figure, and 28.1 dB image rejection ratio over the 2.4–2.48 GHz band, while consuming 537 μW. The proposed front-end is suitable for low-power BLE BAN sensor nodes.

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Publication Details

Journal
Electronics
Published
2026-04-13
DOI
https://doi.org/10.3390/electronics15081614
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

A Low-Power Low-IF BLE Receiver Front-End with a Common-Gate TIA and Gm-C Complex Filter for Body Area Network Applications

Lizhuang Liu, Zhaofeng Zhang, Yajun Xia
Electronics
Radio Frequency Integrated Circuit Design
article

A Low-Power Low-IF BLE Receiver Front-End with a Common-Gate TIA and Gm-C Complex Filter for Body Area Network Applications

Lizhuang Liu, Zhaofeng Zhang, Yajun Xia
article en

Abstract

In this article, a low-power low-intermediate-frequency (Low-IF) receiver front-end is presented for Bluetooth Low Energy (BLE) body area network (BAN) applications. The receiver employs an input matching network, an inductorless self-biased inverter-based low-noise transconductance amplifier (LNTA), a single-balanced passive mixer, a common-gate transimpedance amplifier (TIA), and a Gm-C complex filter for image suppression. Native MOS devices are adopted to support low-voltage operation and reduce static power consumption. The interstage on-chip coupling capacitor between the RF front-end and the TIA is removed by aligning the DC operating points of the two stages. The receiver front-end is implemented in a 55 nm standard CMOS process and occupies an active area of 0.081 mm2, excluding bonding pads. Post-layout simulations show that the proposed design achieves 45.2 dB gain, 7.2 dB noise figure, and 28.1 dB image rejection ratio over the 2.4–2.48 GHz band, while consuming 537 μW. The proposed front-end is suitable for low-power BLE BAN sensor nodes.

ElectronicsVol. 15(8)
Chinese Academy of Sciences (CN), Jilian Technology Group (China) (CN), Shanghai Advanced Research Institute (CN), University of Chinese Academy of Sciences (CN)
Affordable and clean energy
Openalex Percentile: Top 16%
Radio Frequency Integrated Circuit Design
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