Visualizing lattice-mismatch-dependent strain relaxation in epitaxially grown MoS <sub>2</sub> /WS <sub>2</sub> and MoS <sub>2</sub> /WSe <sub>2</sub> hetero-bilayers
lattice emerges as an energetically favorable mechanism for strain release, in contrast to commensurate alignment in small-mismatch systems. Our results establish moiré pattern analysis as a powerful framework for directly visualizing spatially varying strain and its relaxation pathways in vdW hetero-bilayers. Our work reveals previously inaccessible interfacial deformation modes in vdW hetero-bilayers and establishes moiré analysis as a powerful platform for strain engineering in 2D electronic and optoelectronic materials.
Authors
- Gwan‐Hyoung Lee (ORCID: https://orcid.org/0000-0002-3028-867X)
- Ingyu Yoo (ORCID: https://orcid.org/0009-0001-3797-9473)
- Jian‐Min Zuo (ORCID: https://orcid.org/0000-0002-5151-3370)
- Jinwoo Kim (ORCID: https://orcid.org/0009-0005-7957-5556)
- Jaewoong Joo
- Hyoungseok Lee
- Jundong Yeo (ORCID: https://orcid.org/0009-0004-4381-7069)
- Miyoung Kim
Institutions
- Seoul National University (KR)
- Monash University (AU)
Publication Details
- Journal
- Reports on Progress in Physics
- Published
- 2026-04-01
- DOI
- https://doi.org/10.1088/1361-6633/ae5ea2
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Research Foundation of Korea
- Institute of Engineering Research, Seoul National University