Critical sample sizes for apperance and disappearance of ferroelectricity in nanosized hafnia-zirconia: Landau-type theory

Nanosized hafnia-zirconia <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"> <a:mrow> <a:msub> <a:mi mathvariant="normal">Hf</a:mi> <a:mi>x</a:mi> </a:msub> <a:msub> <a:mi mathvariant="normal">Zr</a:mi> <a:mrow> <a:mn>1</a:mn> <a:mo>−</a:mo> <a:mi>x</a:mi> </a:mrow> </a:msub> <a:msub> <a:mi mathvariant="normal">O</a:mi> <a:mn>2</a:mn> </a:msub> </a:mrow> </a:math> in the form of thin films, multilayers, and heterostructures are indispensable silicon-compatible ferroelectric materials for advanced electronic memories and logic devices. The distinctive feature of nanoscale hafnia-zirconia are the critical sizes of ferroelectricity appearance, whereas the critical sizes of ferroelectricity disappearance exist in other ferroelectrics. Using the Landau-Ginzburg-Devonshire free energy functional with higher powers, trilinear and biquadratic couplings of polar, nonpolar, and antipolar order parameters, we calculated analytically the strain-dependent critical sizes of the ferroelectricity appearance and disappearance, analyzed how the size effect and mismatch strains influence the phase diagrams and polarization switching barrier in epitaxial <e:math xmlns:e="http://www.w3.org/1998/Math/MathML"> <e:mrow> <e:msub> <e:mi>HfO</e:mi> <e:mn>2</e:mn> </e:msub> </e:mrow> </e:math> thin films and nano-islands with the out-of-plane spontaneous polarization. We have shown that the critical thickness/height of out-of-plane spontaneous polarization disappearance is determined by the size dependence of the depolarization field and correlation effects. The critical thickness/height of the ferroelectricity appearance is determined by the size dependence of the effective mismatch strain considering possible appearance of misfit dislocations and lateral relaxion of strains. Derived analytical expressions can be generalized for <f:math xmlns:f="http://www.w3.org/1998/Math/MathML"> <f:mrow> <f:msub> <f:mi mathvariant="normal">Hf</f:mi> <f:mi>x</f:mi> </f:msub> <f:msub> <f:mi mathvariant="normal">Zr</f:mi> <f:mrow> <f:mn>1</f:mn> <f:mo>−</f:mo> <f:mi>x</f:mi> </f:mrow> </f:msub> <f:msub> <f:mi mathvariant="normal">O</f:mi> <f:mn>2</f:mn> </f:msub> </f:mrow> </f:math> solid solutions, providing that corresponding parameters of the free energy are known from the first-principles calculations.

Authors

Institutions

Publication Details

Journal
Physical review. B./Physical review. B
Published
2026-04-13
DOI
https://doi.org/10.1103/hcm2-x9nj
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Critical sample sizes for apperance and disappearance of ferroelectricity in nanosized hafnia-zirconia: Landau-type theory

Anonymous
Physical review. B./Physical review. B
Ferroelectric and Negative Capacitance Devices
article

Critical sample sizes for apperance and disappearance of ferroelectricity in nanosized hafnia-zirconia: Landau-type theory

Anonymous
article en

Abstract

Nanosized hafnia-zirconia <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"> <a:mrow> <a:msub> <a:mi mathvariant="normal">Hf</a:mi> <a:mi>x</a:mi> </a:msub> <a:msub> <a:mi mathvariant="normal">Zr</a:mi> <a:mrow> <a:mn>1</a:mn> <a:mo>−</a:mo> <a:mi>x</a:mi> </a:mrow> </a:msub> <a:msub> <a:mi mathvariant="normal">O</a:mi> <a:mn>2</a:mn> </a:msub> </a:mrow> </a:math> in the form of thin films, multilayers, and heterostructures are indispensable silicon-compatible ferroelectric materials for advanced electronic memories and logic devices. The distinctive feature of nanoscale hafnia-zirconia are the critical sizes of ferroelectricity appearance, whereas the critical sizes of ferroelectricity disappearance exist in other ferroelectrics. Using the Landau-Ginzburg-Devonshire free energy functional with higher powers, trilinear and biquadratic couplings of polar, nonpolar, and antipolar order parameters, we calculated analytically the strain-dependent critical sizes of the ferroelectricity appearance and disappearance, analyzed how the size effect and mismatch strains influence the phase diagrams and polarization switching barrier in epitaxial <e:math xmlns:e="http://www.w3.org/1998/Math/MathML"> <e:mrow> <e:msub> <e:mi>HfO</e:mi> <e:mn>2</e:mn> </e:msub> </e:mrow> </e:math> thin films and nano-islands with the out-of-plane spontaneous polarization. We have shown that the critical thickness/height of out-of-plane spontaneous polarization disappearance is determined by the size dependence of the depolarization field and correlation effects. The critical thickness/height of the ferroelectricity appearance is determined by the size dependence of the effective mismatch strain considering possible appearance of misfit dislocations and lateral relaxion of strains. Derived analytical expressions can be generalized for <f:math xmlns:f="http://www.w3.org/1998/Math/MathML"> <f:mrow> <f:msub> <f:mi mathvariant="normal">Hf</f:mi> <f:mi>x</f:mi> </f:msub> <f:msub> <f:mi mathvariant="normal">Zr</f:mi> <f:mrow> <f:mn>1</f:mn> <f:mo>−</f:mo> <f:mi>x</f:mi> </f:mrow> </f:msub> <f:msub> <f:mi mathvariant="normal">O</f:mi> <f:mn>2</f:mn> </f:msub> </f:mrow> </f:math> solid solutions, providing that corresponding parameters of the free energy are known from the first-principles calculations.

Physical review. B./Physical review. BVol. 113(17)
Taras Shevchenko National University of Kyiv (UA), Frantsevich Institute for Problems in Materials Science (UA), V.E. Lashkaryov Institute of Semiconductor Physics (UA), University of Tennessee at Knoxville (US)
National Research Foundation of Ukraine, Ministry of Education and Science of Ukraine, Taras Shevchenko National University of Kyiv
Openalex Percentile: Top 29%
Ferroelectric and Negative Capacitance Devices
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.