Performance improvement of NiO/β-Ga2O3 heterojunction diodes using ultrathin amorphous BN interfacial layer
In this work, a NiO/β-Ga2O3 heterojunction diode with an ultrathin (∼2 nm) amorphous boron nitride (a-BN) interfacial layer (IL) is presented. The NiO/a-BN/β-Ga2O3 heterojunction diode exhibited a lower turn-on voltage and a higher forward current, thereby reducing the power dissipation, compared to the NiO/β-Ga2O3 diode without an a-BN IL. It is also found that the a-BN IL reduces the interface states, leading to the improvement of the operational reliability after bias stress and reverse blocking characteristics.
Authors
- Myunghun Shin (ORCID: https://orcid.org/0000-0003-3790-4022)
- D. G. Kim
- Jongsu Baek
- Yohan Yoon (ORCID: https://orcid.org/0000-0002-9138-9677)
- Dahee Seo (ORCID: https://orcid.org/0009-0001-7813-9577)
- Daewon Kang
- Wookyung Jeon (ORCID: https://orcid.org/0009-0001-5302-7392)
- Byung Jin Cho (ORCID: https://orcid.org/0000-0001-5284-8407)
- Youngkwan Cho
Institutions
- Korea Advanced Institute of Science and Technology (KR)
- Korea Electrotechnology Research Institute (KR)
- Korea Aerospace University (KR)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2026-04-13
- DOI
- https://doi.org/10.1063/5.0321156
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Korea Research Institute for Defense Technology Planning and Advancement
- Ministry of Trade, Industry and Energy