Author Correction: Wafer-scale high-κ HfO2 dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS2 transistors

In the version of the article initially published, there were errors in Fig. 5f, g, i and associated text.The figure has been updated and for comparison, the original figure is available as Supplementary Information accompanying this amendment.In the Fig. 5g legend, now reading " voltage gain and static power of an inverter as supply voltage from 0.2 to 1.0 V," the range originally read "0.1 to 0.5 V." In the Fig. 5k legend, the text now reading "at supply voltage of 1.0 V.The output frequency is 2.35 MHz," the two values appeared originally as "0.5 V" and "3.15 MHz."In the second paragraph of the Results "8-inch wafer-scale 2D circuits with 1.3-nm-HfO 2 " section, in the sentences now reading "It shows a high gain of 40 and 205 at V dd of 0.2 and 1.0 V, respectively.At the same time, the static power is only 22 pW at V dd of 0.2 V," "0.2 and 1.0 V" originally read "0.1 and 0.5 V" and "0.2 V" originally read "0.1 V".

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Publication Details

Journal
Nature Communications
Published
2026-04-13
DOI
https://doi.org/10.1038/s41467-026-71971-2
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
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article

Author Correction: Wafer-scale high-κ HfO2 dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS2 transistors

Yang Chai, Dongfeng Zheng, Shuopei Wang, Xiuzhen Li et al.
Nature Communications
Ferroelectric and Negative Capacitance Devices
article

Author Correction: Wafer-scale high-κ HfO2 dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS2 transistors

Yang Chai, Dongfeng Zheng, Shuopei Wang, Xiuzhen Li, Na Li, Dunfa Shi, G L Zhang, Tao Zhang, Hang Yu, Hailing Guo, Liangfeng Huang, Liqi Bai, Luojun Du, Lede Xian, Yuchao Zhou, Su Liu, Chenyang Cui, Wei Yang, Songge Zhang, Tong Li, Xiaoming Tao
article en

Abstract

In the version of the article initially published, there were errors in Fig. 5f, g, i and associated text.The figure has been updated and for comparison, the original figure is available as Supplementary Information accompanying this amendment.In the Fig. 5g legend, now reading " voltage gain and static power of an inverter as supply voltage from 0.2 to 1.0 V," the range originally read "0.1 to 0.5 V." In the Fig. 5k legend, the text now reading "at supply voltage of 1.0 V.The output frequency is 2.35 MHz," the two values appeared originally as "0.5 V" and "3.15 MHz."In the second paragraph of the Results "8-inch wafer-scale 2D circuits with 1.3-nm-HfO 2 " section, in the sentences now reading "It shows a high gain of 40 and 205 at V dd of 0.2 and 1.0 V, respectively.At the same time, the static power is only 22 pW at V dd of 0.2 V," "0.2 and 1.0 V" originally read "0.1 and 0.5 V" and "0.2 V" originally read "0.1 V".

Nature CommunicationsVol. 17(1)
Hong Kong Polytechnic University (HK), University of Electronic Science and Technology of China (CN), City University of Hong Kong (HK), Chinese Academy of Sciences (CN), University of Cambridge (GB), Songshan Lake Materials Laboratory (CN), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Institute for Advanced Study (DE), Max Planck Institute for the Structure and Dynamics of Matter (DE), Institute of Physics (CN), National Laboratory for Superconductivity (CN), University of Chinese Academy of Sciences (CN)
Affordable and clean energy
Openalex Percentile: Top 26%
Ferroelectric and Negative Capacitance Devices
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