Synthesis and Optical Properties Of Aluminium Nickel Sulphide(Al4.5ni7s3) Ternary Thin Films for Optoelectronic Devices

Al₄.₅Ni₇ S₃ ternary thin films were deposited on the substrates by using Solution Growth Technique (SGT). The films were grown at temperature of 333K. The sources of Aluminium, Nickel and Sulphur ions are Aluminium Chloride, Nickel Chloride, ethylenediamine tetraacetic acide (EDTA), concentrated ammonia solution and thiourea. The films were annealed at 300˚C for 2 hours. Optical characterization of the films was carried out using UV-VIS-NIR Spectrophotometer in the wavelength range of 300nm-1000

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Publication Details

Journal
EBONYI STATE COLLEGE OF EDUCATION IKWO JOURNAL OF EDUCATIONAL RESEARCH
Published
2026-04-12
DOI
https://doi.org/10.61955/oeupew
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
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article

Synthesis and Optical Properties Of Aluminium Nickel Sulphide(Al4.5ni7s3) Ternary Thin Films for Optoelectronic Devices

Kelechi Kelechi
EBONYI STATE COLLEGE OF EDUCATION IKWO JOURNAL OF EDUCATIONAL RESEARCH
Chalcogenide Semiconductor Thin Films
article

Synthesis and Optical Properties Of Aluminium Nickel Sulphide(Al4.5ni7s3) Ternary Thin Films for Optoelectronic Devices

Kelechi Kelechi
article en

Abstract

Al₄.₅Ni₇ S₃ ternary thin films were deposited on the substrates by using Solution Growth Technique (SGT). The films were grown at temperature of 333K. The sources of Aluminium, Nickel and Sulphur ions are Aluminium Chloride, Nickel Chloride, ethylenediamine tetraacetic acide (EDTA), concentrated ammonia solution and thiourea. The films were annealed at 300˚C for 2 hours. Optical characterization of the films was carried out using UV-VIS-NIR Spectrophotometer in the wavelength range of 300nm-1000

EBONYI STATE COLLEGE OF EDUCATION IKWO JOURNAL OF EDUCATIONAL RESEARCH
Ebonyi State University (NG)
Openalex Percentile: Top 9%
Chalcogenide Semiconductor Thin Films
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