Reconfigurable skin electronics enabled by intrinsically stretchable photoelectric memory transistors
cycles). At the single-transistor level, they define always-open ('1') and always-closed ('0') states that can be reconfigured into diverse logic gates. Finally, we demonstrate wafer-scale integration of various reconfigurable logic-in-memory architectures on a 4-inch elastomeric substrate, establishing a system-level platform that parallels field-programmable gate arrays in a fully stretchable form factor for adaptive and intelligent skin electronics that co-localize data storage and computation.
Authors
- Min Woo Jeong (ORCID: https://orcid.org/0000-0001-6305-1110)
- Jin Young Oh (ORCID: https://orcid.org/0000-0003-2260-9960)
- Ngoc Thanh Phuong Vo
- Sung Yeon Hwang (ORCID: https://orcid.org/0000-0002-4618-2132)
- Tae Il Lee (ORCID: https://orcid.org/0000-0001-9423-0912)
- Thuy An Nguyen
- Seung Woong Lee
- Seon Hoo Park
- Hye Rin Chang
Institutions
- Gachon University (KR)
- Kyung Hee University (KR)
Publication Details
- Journal
- Nature Communications
- Published
- 2026-04-13
- DOI
- https://doi.org/10.1038/s41467-026-71589-4
- Primary Topic
- Advanced Sensor and Energy Harvesting Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Research Foundation
- Ministry of Trade, Industry and Energy
- Korea Institute for Advancement of Technology
- National Research Foundation of Korea
- Gyeonggi-do Regional Research Center
- Ministry of Science and ICT, South Korea