Charge collection in solid state detectors: 2D solver extension for semiconductor systems

The simulation of charge collection generated by the passage of a particle through a semiconductor, such as silicon, is performed by numerically solving the Poisson and drift-diffusion equations, which are commonly referred to as semiconductor equations. Limitations of 1D and 2D solvers are presented and discussed through analysis of ion-induced transients created in SSD (Solid State Detector). To address the intrinsic limitations of conventional 2D simulations in describing charge collection dynamics, an extension of the model is proposed. Finally, comparisons with experimental measurements are conducted to validate the approach and the results obtained. This study is particularly focused on the use of transients for the recognition of incident particles and their energies, as well as simulations of more complex systems, where the propagation of SETs (Single Event Transients) can lead to undesired failures. The amplitude and duration of these SETs are two critical parameters, which a classical 2D simulation may not accurately reproduce