Role of mechanical stress on the electrothermal and OFF state current in scaled FinFET devices

is observed in the n-FinFET due to the self-heating effects. A similar effect is observed in the p-FinFET, where the lattice temperature increases to 357 K at 90% germanium concentrations. Furthermore, the presence of a non-uniform electric field creates local quantum confinement of charge carriers in the channel, altering the band gap and intensifying the GIDL component in the n-/p-FinFET.