Ultra-broadband single-stack mid-infrared semiconductor lasers grown by MOCVD

at 298 K. Devices, with a total peak output power of 2.72 W and a slope efficiency of 1.3 W/A, have shown a lasing spectrum of ~1 μm over 43% of the current dynamic range, with a maximum bandwidth of 1.2 μm around the rollover current. Moreover, a much broader lasing bandwidth of 1.93 μm is obtained from the same device at 80 K, accounting for 22% of the center wavelength. This work represents substantial progress on the single-stack ultra-broadband mid-infrared semiconductor lasers and may provide a novel platform for mid-infrared frequency combs, which are of paramount importance to broadband high-precision spectroscopy, imaging, and free-space communication systems.