Highly stable ferroelectric memristors fabricated from epitaxial Hf0.2Zr0.8O2 thin films for practical logic gate circuit testing

Ferroelectric memristors are expected to become pivotal devices in the next generation of artificial intelligence systems and neuromorphic computing. Hafnium–zirconium oxide is an attractive material for memristors because it can maintain ferroelectric properties even at ultrathin thicknesses, but the stability of the ferroelectric phase remains underexplored. Here, a high-quality epitaxial Pd/Hf 0.2 Zr 0.8 O 2 /La 0.67 Sr 0.33 MnO 3 /SrTiO 3 ferroelectric memristor is fabricated, comprising Hf 0.2 Zr 0.8 O 2 as the functional layer, Pd as the top electrode, and La 0.67 Sr 0.33 MnO 3 as the bottom electrode. The memristor maintains excellent ferroelectric properties across frequencies of 5 kHz to 100 kHz and temperatures up to 483 K, and both its residual polarization and resistance switching exhibit exceptional retention (>4 × 10 4 s) and endurance (>10 8 cycles). In experiments, the ferroelectric memristor is used to construct six basic logic gate circuits, which in turn are combined to construct half adders and full adders. Finally, a cryptographic unit array is constructed to simulate the encryption and decryption of biometric data. The developed device is expected to facilitate the wider application of ferroelectric memristors in information security and other fields.