Quasi-isotropy of nanocrystalline silicon film: An inelastic light scattering study

Nanocrystalline silicon thin membranes exhibit high potential in micro-electro-mechanical systems and in optoelectronic and optomechanical applications due to the distinct microstructure, which enables enhanced nonlinear dynamics, broader operational bandwidth, and tunable mechanical and thermal properties compared to single-crystalline silicon. This work presents a comprehensive investigation of the structural characteristics of nanocrystalline silicon using angle-resolved polarized Raman spectroscopy. Our analysis reveals a striking transition from the strong anisotropy of crystalline Si(100) to a quasi-isotropic behavior in nanocrystalline silicon. Inelastic light scattering provides an efficient nondestructive method to characterize the crystallographic texture of nanocrystalline semiconductor films, offering valuable guidance for their optimization in advanced electronic, flexible, and optomechanical devices.

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Publication Details

Journal
Applied Physics Letters
Published
2026-04-06
DOI
https://doi.org/10.1063/5.0320594
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

Quasi-isotropy of nanocrystalline silicon film: An inelastic light scattering study

Gloria Conte, T. Makkonen, Oili Ylivaara, Manjunath Balagopalan et al.
Applied Physics Letters
Thin-Film Transistor Technologies
article

Quasi-isotropy of nanocrystalline silicon film: An inelastic light scattering study

Gloria Conte, T. Makkonen, Oili Ylivaara, Manjunath Balagopalan, Jouni Ahopelto, Omid Reza Ranjbar-Naeini, Clivia M. Sotomayor Torres
article en

Abstract

Nanocrystalline silicon thin membranes exhibit high potential in micro-electro-mechanical systems and in optoelectronic and optomechanical applications due to the distinct microstructure, which enables enhanced nonlinear dynamics, broader operational bandwidth, and tunable mechanical and thermal properties compared to single-crystalline silicon. This work presents a comprehensive investigation of the structural characteristics of nanocrystalline silicon using angle-resolved polarized Raman spectroscopy. Our analysis reveals a striking transition from the strong anisotropy of crystalline Si(100) to a quasi-isotropic behavior in nanocrystalline silicon. Inelastic light scattering provides an efficient nondestructive method to characterize the crystallographic texture of nanocrystalline semiconductor films, offering valuable guidance for their optimization in advanced electronic, flexible, and optomechanical devices.

Applied Physics LettersVol. 128(14)
International Iberian Nanotechnology Laboratory (PT), VTT Technical Research Centre of Finland (FI)
Academy of Finland, European Research Council
Openalex Percentile: Top 24%
Thin-Film Transistor Technologies
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Quasi-isotropy of nanocrystalline silicon film: An inelastic light scattering study — Gloria Conte, T. Makkonen, et al. · Applied Physics Letters (2026) | TGRS Research Map | TGRS