Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application (Adv. Funct. Mater. 28/2026)
Pentagonal 2D Altermagnets In their Research Article (10.1002/adfm.202505145), Yee Sin Ang, Zhenxiang Cheng, Shibo Fang, and co-workers identify the first altermagnetic second-order topological insulator, Penta-MnS2, and design a related high-performance altermagnetic tunneling junction. The figure illustrates a tunneling junction composed of MnS2, featuring both spin-polarized corner states and altermagnetic Bloch states. This work provides a new direction for the development of future low-power, high-speed memory devices.
Authors
- Wenhong Wang
- Jiangbo Lu (ORCID: https://orcid.org/0000-0002-0048-3140)
- Xia Yang (ORCID: https://orcid.org/0000-0002-3971-038X)
- Jianhua Wang
- Yee Sin Ang
- Shibo Fang
- Pin Ho
- Zhenxiang Cheng
- Zongmeng Yang
Institutions
- Agency for Science, Technology and Research (SG)
- Singapore University of Technology and Design (SG)
- Tiangong University (CN)
- Peking University (CN)
- University of Wollongong (AU)
- Institute of Materials Research and Engineering (SG)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2026-04-01
- DOI
- https://doi.org/10.1002/adfm.74837
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00