Superradiance in GaN-(Al,Ga)N resonant Bragg structures with single and double quantum wells in the unit supercell

We demonstrate the effect of superradiant exciton–polariton mode formation at room temperature in the reflection spectra from resonant Bragg structures (RBSs) composed of GaN quantum wells (QWs) separated by Al0.15Ga0.85N barriers. We have developed and created RBS with single and double GaN QWs in the unit supercell. Double GaN/(Al,Ga)N QWs fabrication in RBS provides record room temperature performance compared to other structures. Decreasing the built-in electric fields in a complex unit supercell results in a record-high radiative broadening ℏΓ0 of excitons in GaN QW equal to 0.5 ± 0.02 meV. We also demonstrate that implementation of the complex unit supercell in RBS is a way to enhance the photon–exciton coupling and to address the problems related to optical losses and small variations of thickness of the (Al,Ga)N barriers.

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Publication Details

Journal
Applied Physics Letters
Published
2026-04-06
DOI
https://doi.org/10.1063/5.0322897
Primary Topic
Strong Light-Matter Interactions
Type
article
Field-Weighted Citation Impact
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article

Superradiance in GaN-(Al,Ga)N resonant Bragg structures with single and double quantum wells in the unit supercell

A. F. Tsatsulnikov, V. V. Chaldyshev, A. A. Ivanov, A. E. Nikolaev et al.
Applied Physics Letters
Strong Light-Matter Interactions
article

Superradiance in GaN-(Al,Ga)N resonant Bragg structures with single and double quantum wells in the unit supercell

A. F. Tsatsulnikov, V. V. Chaldyshev, A. A. Ivanov, A. E. Nikolaev, A. V. Sakharov, D. S. Arteev
article en

Abstract

We demonstrate the effect of superradiant exciton–polariton mode formation at room temperature in the reflection spectra from resonant Bragg structures (RBSs) composed of GaN quantum wells (QWs) separated by Al0.15Ga0.85N barriers. We have developed and created RBS with single and double GaN QWs in the unit supercell. Double GaN/(Al,Ga)N QWs fabrication in RBS provides record room temperature performance compared to other structures. Decreasing the built-in electric fields in a complex unit supercell results in a record-high radiative broadening ℏΓ0 of excitons in GaN QW equal to 0.5 ± 0.02 meV. We also demonstrate that implementation of the complex unit supercell in RBS is a way to enhance the photon–exciton coupling and to address the problems related to optical losses and small variations of thickness of the (Al,Ga)N barriers.

Applied Physics LettersVol. 128(14)
Submicron Heterostructures for Microelectronics Research and Engineering Center (RU), Ioffe Institute (RU)
Openalex Percentile: Top 18%
Strong Light-Matter Interactions
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