Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In <sub>2</sub> Se <sub>3</sub> (Adv. Mater. 20/2026)
Van der Waals Ferroelectric By transferring van der Waals ferroelectrics with opposite polarization, it is possible to create an artificial highly conducting charge domain wall at the interface. This provides a new strategy for engineering emergent states in van der Waals materials and a new route for synthesizing on demand and electrically addressable charge domain walls. More details can be found in the Research Article by Arend M. van der Zande and co-workers (DOI: 10.1002/adma.202523096).
Authors
- Haiyue Dong
- Shahriar Muhammad Nahid (ORCID: https://orcid.org/0000-0002-0049-6152)
- Arend M. van der Zande (ORCID: https://orcid.org/0000-0001-5104-9646)
- Gillian Nolan (ORCID: https://orcid.org/0000-0003-2356-9075)
- Nadya Mason (ORCID: https://orcid.org/0000-0002-7740-6645)
- Pinshane Y. Huang (ORCID: https://orcid.org/0000-0002-1095-1833)
- SungWoo Nam
Institutions
- University of Illinois Urbana-Champaign (US)
- University of California, Irvine (US)
- University of Chicago (US)
- Irvine University (US)
Publication Details
- Journal
- Advanced Materials
- Published
- 2026-04-01
- DOI
- https://doi.org/10.1002/adma.72942
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00