Study on RF Parameter Extraction Method for Novel Heterogeneous Integrated GaN Schottky Rectifiers Based on Hierarchical Reinforcement Learning
This study presents a heterogeneous integration micro-assembly process and circuit board packaging solution for GaN Schottky Barrier Diode (SBD) rectifiers, and innovatively constructs a hierarchical reinforcement learning strategy for optimizing SBD RF parameters. By establishing an optimization framework with the goal of efficiency in the load-input power two-dimensional space, a dual-layer optimization mechanism is employed: the high-level strategy dynamically selects optimization regions and parameter combinations, while the low-level strategy implements specific parameter adjustments. This approach effectively addresses the challenges of device parameter modeling and circuit design. Experimental data shows that the efficiency error for the SBD1 rectifier remains stable within 2%, and the average error for SBD2 is reduced to 1.5%. This method enables efficient and accurate optimization of RF parameters, providing a reliable technical pathway for the engineering application of Wireless Power Transmission systems.
Authors
- Li Huang (ORCID: https://orcid.org/0000-0002-5964-7090)
- Yang Wei
- Xiong Yin
- Ce Wang
Institutions
- Sichuan University (CN)
Publication Details
- Journal
- Electronics
- Published
- 2026-04-07
- DOI
- https://doi.org/10.3390/electronics15071537
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Key Research and Development Program of China