3D Magnetic Memory Using Synthetic Antiferromagnets
Recently 3D magnetic memory using artificial ferromagnets has been proposed as a high-performance memory. However, the interaction among ferromagnetic layers due to stray fields is thought to be a problem for further development of high-density memory. Here, we propose the use of synthetic antiferromagnets to solve the stray field problem. We show that stable bit shifting in 3D memory using SAF is possible by micromagnetic simulation.
Authors
- Ryusuke Hisatomi (ORCID: https://orcid.org/0000-0001-5420-2108)
- Shutaro Karube (ORCID: https://orcid.org/0000-0002-6718-4575)
- Y. Shiota
- T. Ono
- H. Jang
- F. Ye
Institutions
- Kyoto University (JP)
- Spintronics Research Network of Japan (JP)
- Instituto de Investigaciones Químicas (ES)
- Kyoto University Institute for Chemical Research
Publication Details
- Journal
- Journal of the Magnetics Society of Japan
- Published
- 2026-04-07
- DOI
- https://doi.org/10.3379/msjmag.2605r001
- Primary Topic
- Magnetic properties of thin films
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Research Institute of Electrical Communication, Tohoku University
- Institute for Chemical Research, Kyoto University
- Core Research for Evolutional Science and Technology